Bias stability of solution-processed In2O3 thin film transistors

Author:

Abdullah IsamORCID,Emyr Macdonald JORCID,Lin Yen-HungORCID,Anthopoulos Thomas DORCID,Salahr Nasih Hma,Anwar Kakil ShaidaORCID,Muhammadsharif Fahmi F

Abstract

Abstract We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

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