Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
Author:
Affiliation:
1. Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, South Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4902867
Reference20 articles.
1. 4.3:Invited Paper: High Mobility Oxide TFT for Large Area High Resolution AMOLED
2. Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application
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4. Flexible a-IZO thin film transistors fabricated by solution processes
5. Solution-processed flexible ZnO transparent thin-film transistors with a polymer gate dielectric fabricated by microwave heating
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