Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4754627
Reference17 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Novel ZrInZnO Thin-film Transistor with Excellent Stability
3. High-Performance a-IGZO Thin-Film Transistor Using $ \hbox{Ta}_{2}\hbox{O}_{5}$ Gate Dielectric
4. High-gain complementary inverter with InGaZnO/pentacene hybrid ambipolar thin film transistors
5. Nitrogenated amorphous InGaZnO thin film transistor
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