Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering-Reference-Cited by-同舟云学术

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Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering

Published:2014 Issue:9 Volume:3 Page:Q3085-Q3090
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Miyase Takaya,Watanabe Ken,Sakaguchi Isao,Ohashi Naoki,Domen Kay,Nomura Kenji,Hiramatsu Hidenori,Kumomi Hideya,Hosono Hideo,Kamiya Toshio

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. "Front Drive" Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT Array

3. Lee H. N. Kyung J. W. Kang S. K. Kim D. Y. Sung M. C. Kim S. J. Kim C. N. Kim H. G. Kim S. T. , Proc. Int. Display Workshop 663 (2006).

4. Factors controlling electron transport properties in transparent amorphous oxide semiconductors

5. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

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