Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths-Reference-Cited by-同舟云学术

Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

Published:2011-09-19 Issue:12 Volume:99 Page:122107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mativenga Mallory,Seok Manju,Jang Jin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3641473

Reference21 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Material characteristics and applications of transparent amorphous oxide semiconductors

3. Present status of amorphous In–Ga–Zn–O thin-film transistors

4. Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

Cited by 80 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in β-Ga2O3 FinFET;Solid-State Electronics;2024-05

2. Characterization of ZnO Thin-film Transistors with Various Active Layer Structures after Exposure to Different Proton Energies;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2024-04-30

3. Negative bias stress stable PtOx/InGaZnOx Schottky barrier diodes optimized by oxygen annealing;Journal of Applied Physics;2024-03-18

4. Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices;physica status solidi (a);2024-01-22

5. Stretchable Oxide Thin-Film Transistors with a Mechanically and Electrically Reliable Wavy Structure for Skin Electronics;ACS Applied Electronic Materials;2023-12-28