Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors-Reference-Cited by-同舟云学术

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a-InGaZnO Thin Film Transistors

Published:2019-01-07 Issue:4 Volume:216 Page:1800621
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kang Yun-Seong¹^ORCID,Lee Yeol-Hyeong¹,Kim Woo-Sic¹,Cho Yong-Jung¹,Park JeongKi²,Kim GeonTae²,Kim Ohyun¹

Affiliation:

1. Department of Electrical Engineering; Pohang University of Science and Technology; Pohang Kyungbuk 37673 Korea

2. IT Development Group; LG Display; Gumi Kyungbuk 39394 Korea

Funder

MSIT (Ministry of Science and ICT), Korea

ITTP (Institute for Information & communications Technology Promotion)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800621/fullpdf

Reference43 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Negative bias illumination stress stability of dual-active layer amorphous indium-gallium-zinc-oxide thin-film transistor

4. Effect of illumination on the hump phenomenon in I -V characteristics of amorphous InGaZnO TFTs under positive gate-bias stress

5. Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors

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