Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator-Reference-Cited by-同舟云学术

Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator

Published:2023-01-29 Issue:6 Volume:15 Page:8666-8675
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Jiye¹^ORCID,Zhang Yuqing²,Wang Jialiang³,Yang Huan¹^ORCID,Zhou Xiaoliang¹,Chan Mansun²,Wang Xinwei³^ORCID,Lu Lei¹,Zhang Shengdong¹⁴

Affiliation:

1. School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China

2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, China

3. School of Advanced Materials, Peking University, Shenzhen 518055, China

4. School of Integrated Circuits, Peking University, Beijing 100871, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Shenzhen Municipal Scientific Program

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c20176

Reference70 articles.

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