Electrical Characterization of Zinc-Rich Amorphous In-Ga-Zn-O Thin Film Transistors-Reference-Cited by-同舟云学术

Electrical Characterization of Zinc-Rich Amorphous In-Ga-Zn-O Thin Film Transistors

Published:2018-08-07 Issue:21 Volume:215 Page:1800085
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ochi Mototaka¹,Hino Aya¹,Goto Hiroshi¹,Hayashi Kazushi¹,Kugimiya Toshihiro¹

Affiliation:

1. Applied Physics Research Laboratory, Kobe Steel, Ltd.; 1-5-5 Takatsuka-dai, Nishi-ku Kobe 651-2271 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800085/fullpdf

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4. S. Nakano N. Saito K. Miura T. Sakano T. Ueda K. Sugi H. Yamaguchi I. Amemiya M. Hiramatsu A. Ishida K. Kanomaru M. Sawada Proc. 18th Int. Display Workshop 2011 1271

5. Factors controlling electron transport properties in transparent amorphous oxide semiconductors

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