Improved Electron Transport Properties of Zn-Rich In–Ga–Zn–O Thin-Film Transistors-Reference-Cited by-同舟云学术

Improved Electron Transport Properties of Zn-Rich In–Ga–Zn–O Thin-Film Transistors

Author:

Ghediya Prashant¹,Yang Hui¹²,Fujimoto Takashi³,Zhang Yuqiao⁴⁵^ORCID,Matsuo Yasutaka¹^ORCID,Magari Yusaku¹^ORCID,Ohta Hiromichi¹^ORCID

Affiliation:

1. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo001-0020, Japan

2. Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing100044, China

3. Graduate School of Information Science and Technology, Hokkaido University, Sapporo060-0814, Japan

4. Institute of Quantum and Sustainable Technology (IQST), School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang212013, China

5. Foshan (Southern China) Institute for New Materials, Foshan528200, China

Funder

Ministry of Education, Culture, Sports, Science and Technology

Jiangsu University

Japan Society for the Promotion of Science

China Scholarship Council

Natural Science Foundation of Guangdong Province

Crossover Alliance to Create a Future with People, Intelligence and Materials

Network Joint Research Center for Materials and Devices

Foshan Institute for New Materials

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

Reference25 articles.

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