Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors-Reference-Cited by-同舟云学术

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Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

Published:2008 Issue:6 Volume:11 Page:H157
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Jeong Jong Han,Yang Hui Won,Park Jin-Seong,Jeong Jae Kyeong,Mo Yeon-Gon,Kim Hye Dong,Song Jaewon,Hwang Cheol Seong

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference12 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

4. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

5. Special Issue on Flexible Electronics Technology, Part 1: Systems and Applications

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