P‐265: Tailoring SS of a‐IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences-Reference-Cited by-同舟云学术

P‐265: Tailoring SS of a‐IGZO TFT through Defect Formation Mechanism during PEALD Deposition Sequences

Published:2024-06 Issue:1 Volume:55 Page:2253-2255
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Yoon Seong Hun¹,Hur Jae Seok²,Bang Seon Woong²,Jeong Jae Kyeong¹²

Affiliation:

1. Department of Display Science and Engineering Hanyang University Seoul Republic of Korea

2. Department of Electronic Engineering Hanyang University Seoul Republic of Korea

Abstract

We reported the fabrication of indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) by plasma‐enhanced atomic‐layer‐deposition (PEALD) process using different surface reactivities of the precursor‐substrate combinations with controlled deposition sequences. In‐Zn‐Ga (Case II) exhibited favorable subthreshold swing (SS) values of 313 mV/decade, and moderate mobility (µFE) of 29.3 cm2/Vs compared to In‐Ga‐Zn (Case I) (84 mV/decade and 33.4 cm2/Vs).

Publisher

Wiley

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