Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability-Reference-Cited by-同舟云学术

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Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ishiduki Megumi,Fukuzumi Yoshiaki,Katsumata Ryota,Kito Masaru,Kido Masaru,Tanaka Hiroyasu,Komori Yosuke,Nagata Yuzo,Fujiwara Tomoko,Maeda Takashi,Mikajiri Yoshimasa,Oota Shigeto,Honda Makoto,Iwata Yoshihisa,Kirisawa Ryouhei,Aochi Hideaki,Nitayama Akihiro

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424261.pdf?arnumber=5424261

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The rise of memtransistors for neuromorphic hardware and In-memory computing;Nano Energy;2024-07

2. GaN-Based Charge Trapping Memory With an AlN Interfacial Layer for Multi-State Operation;IEEE Electron Device Letters;2024-07

3. Smart Electrical Screening Methodology for Channel Hole Defects of 3D Vertical NAND (VNAND) Flash Memory;Eng;2024-03-19

4. Endurance Improvement of GaN Bipolar Charge Trapping Memory With Back Gate Injection;IEEE Electron Device Letters;2023-09

5. Grain Size Engineering Using Amorphous-Ge/Si Stack to Enhance Channel Mobility for NAND Flash Memory;IEEE Transactions on Electron Devices;2022-10

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