Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer-Reference-Cited by-同舟云学术

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Performance Improvement of SONOS Memory by Bandgap Engineering of Charge-Trapping Layer

Published:2004-04 Issue:4 Volume:25 Page:205-207
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:en
Short-container-title:IEEE Electron Device Lett.

Author:

Chen T.-S.,Wu K.-H.,Chung H.,Kao C.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/28586/01278557.pdf?arnumber=1278557

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