Surface Passivation by Al2O3anda-SiNx: H Films Deposited on Wet-Chemically Conditioned Si Surfaces-Reference-Cited by-同舟云学术

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Surface Passivation by Al2O3anda-SiNx: H Films Deposited on Wet-Chemically Conditioned Si Surfaces

Published:2012 Issue:6 Volume:1 Page:P320-P325
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Bordihn S.,Mertens V.,Engelhart P.,Kersten F.,Mandoc M. M.,Müller J. W.,Kessels W. M. M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference68 articles.

1. General Relationship for the Thermal Oxidation of Silicon

2. Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress

3. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface

4. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells

5. Low temperature surface passivation for silicon solar cells

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD;Applied Sciences;2017-12-01

2. Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon;Acta Physica Sinica;2015

3. Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation;Applied Physics Letters;2014-12-08

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