Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD-Reference-Cited by-同舟云学术

Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD

Published:2017-12-01 Issue:12 Volume:7 Page:1244
ISSN:2076-3417
Container-title:Applied Sciences
language:en
Short-container-title:Applied Sciences

Author:

Zhang Xiao-Ying,Hsu Chia-Hsun,Cho Yun-Shao,Lien Shui-Yang,Zhu Wen-Zhang,Chen Song-Yan,Huang Wei,Xie Lin-Gui,Chen Lian-Dong,Zou Xu-Yang,Huang Si-Xin

Funder

Ministry of Science and Technology, Taiwan

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Link

http://www.mdpi.com/2076-3417/7/12/1244/pdf

Reference20 articles.

1. Advances in surface passivation and emitter optimization techniques of c-Si solar cells

2. Characterization of Al2O3 surface passivation of silicon solar cells

3. Symmetrical Al2O3-based passivation layers for p- and n-type silicon

4. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

5. Highly effective electronic passivation of silicon surfaces by atomic layer deposited hafnium oxide

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