Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350782
Reference15 articles.
1. Statistics of the Recombinations of Holes and Electrons
2. Electron-Hole Recombination in Germanium
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4. Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination
5. Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
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