Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
1. Stabilization of Silicon Surfaces by Thermally Grown Oxides*
2. Proc. Mat. Research Soc. Meeting;Grovenor,1984
3. Microscopic structure of theSiO2/Si interface
4. Interface states of the Si/SiO2 system and their separation in groups
5. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
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