Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany
Funder
German Federal Ministry for Economic Affairs and Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903483
Reference40 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
2. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
3. Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition
4. Electronic and chemical properties of the c-Si/Al2O3 interface
5. Improved quantitative description of Auger recombination in crystalline silicon
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