Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing

Author:

Duman Elif Sarıgül,Richter Armin,Reichel Christian,Fittkau Jens,Tiec Christiane Le,Moldovan Anamaria,Benick Jan

Publisher

AIP Publishing

Reference11 articles.

1. Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells

2. A. Richter, F. M. M. Souren, D. Schuldis, R. M. W. Görtzen, J. Benick, M. Hermle and S. W. Glunz, “Thermal Stability of Spatial ALD Deposited Al2O3 Capped by PECVD SiN for the Passivation of Lowly- and Highly-Doped P-Type Silicon Surfaces,” in 27th European Photovoltaic Solar Energy Conference and Exhibition, (2012), pp. 1133–1137.

3. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

4. B. Vermang, H. Goverde, A. Lorenz, A. Uruena, J. Das, P. Choulat, E. Cornagliotti, A. Rothschild, J. John, J. Poortmans, R. Mertens, “On the Blistering of Al2O3 Passivation Layers for Si Solar Cells,” in 26th European Photovoltaic Solar Energy Conference and Exhibition, (2011), pp. 1129–1131

5. Silicon Surface Passivation by Al2O3: Effect of ALD Reactants

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