Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks-Reference-Cited by-同舟云学术

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Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

Published:2014-01 Issue:1 Volume:32 Page:01A128
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Bordihn Stefan,Mertens Verena,Müller Jörg W.,Kessels W. M. M. (Erwin)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4852855

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative In Situ Study of the Initial Growth Trends of Atomic Layer-Deposited Al₂O₃ Films;The Journal of Physical Chemistry C;2022-04-18

2. Al2O3/SiNx stacks with ozone-based ALD Al2O3 for surface passivation: Superior layer stability after firing;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022

3. Excellent surface passivation of germanium by a-Si:H/Al2O3 stacks;Journal of Applied Physics;2021-10-07

4. Formation and elimination mechanism of thermal blistering in Al2O3/Si system;Journal of Materials Science;2021-09-01

5. Optimization of ALD $$\hbox {Al}_{2}\hbox {O}_{3}$$ process parameters for passivation of c-silicon and its implementation on industrial monocrystalline silicon solar cell;Applied Physics B;2019-06

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