Enhancing the Emission Efficiency of In[sub 0.2]Ga[sub 0.8]N∕GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates-Reference-Cited by-同舟云学术

Enhancing the Emission Efficiency of In[sub 0.2]Ga[sub 0.8]N∕GaN MQW Blue LED by Using Appropriately Misoriented Sapphire Substrates

Published:2009 Issue:2 Volume:156 Page:H129
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Li Zhen-Yu,Uen Wu-Yih,Lo Ming-Hua,Chiu Ching-Hua,Lin Po-Chun,Hung Chih-Tsang,Lu Tien-Chang,Kuo Hao-Chung,Wang Shing-Chung,Huang Yen-Chin

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

2. Enhanced optical properties of InGaN MQWs with InGaN underlying layers

3. Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

4. High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

5. Growth of blue GaN LED structures on 150-mm Si(111)

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