Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. GaN-Based LEDs and Lasers on SiC
2. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1989, p. 247.
3. Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN
4. Quasiparticle band structures of short-period superlattices and ordered alloys of AlN and GaN
5. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
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