LED Materials: Epitaxy and Quantum Well Structures
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-00176-0_10
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3. Arif RA, Ee YK, Tansu N (2007) Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl Phys Lett 91:091110
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5. Bhagavannarayana G, Ananthamurthy RV, Budakoti GC, Kumar B, Bartwal KS (2005) A study of the effect of annealing on Fe-doped LiNbO3 by HRXRD, XRT and FT-IR. J Appl Crystallogr 38:768–771
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