Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775334
Reference23 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Influence of junction temperature on chromaticity and color-rendering properties of trichromatic white-light sources based on light-emitting diodes
4. The quantum efficiency of green GaInN/GaN light emitting diodes
5. GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
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