GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1940723
Reference11 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
3. 40% efficient thin-film surface-textured light-emitting diodes by optimization of natural lithography
4. Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
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