Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1645992
Reference12 articles.
1. Dimensionality of Excitons in InGaN-Based Light Emitting Devices
2. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN
3. Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
4. Room‐temperature photoenhanced wet etching of GaN
5. Electrical effects of plasma damage in p-GaN
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