Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method-Reference-Cited by-同舟云学术

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Comparison of GaN LED Optical Simulation in 2D and 3D Space Based on k-Domain Analysis Method

Published:2024-06 Issue:3 Volume:60 Page:1-6
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Xia Tianwen¹^ORCID,Wang Le²,Chen Enguo¹^ORCID,Huang Zhonghang¹,Yan Chunli³^ORCID,Wu Dalei¹,Yan Q. Frank¹,Sun Jie¹^ORCID

Affiliation:

1. College of Physics and Information Engineering, Fuzhou University, Fuzhou, China

2. Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing, China

3. Department of Information and Automation, Library of Fuzhou University, Fuzhou, China

Funder

National Key Research and Development Program of China

Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China

Fujian Provincial Projects

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/3/10485567/10500432.pdf?arnumber=10500432

Reference25 articles.

1. Mini-LED, Micro-LED and OLED displays: present status and future perspectives

2. Development of InP Quantum Dot-Based Light-Emitting Diodes

3. Prospects and challenges of mini-LED and micro-LED displays

4. Metal halide perovskites for light-emitting diodes

5. InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

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