Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices
Author:
Affiliation:
1. Microelectronics Laboratory, School of Engineering, University of Glasgow, Glasgow, U.K.
Funder
European Union’s
Innovate U.K. CROSSBRAIN
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/16/10566499/10547321.pdf?arnumber=10547321
Reference40 articles.
1. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
2. A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates
3. MicroLED Microdisplays: An Invention Fueled by Augmented Reality
4. Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication
5. GaN Schottky diodes for RF wireless power detection and conversion
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