Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication-Reference-Cited by-同舟云学术

Characteristics of GaN-on-Si Green Micro-LED for Wide Color Gamut Display and High-Speed Visible Light Communication

Published:2022-12-15 Issue:1 Volume:10 Page:92-100
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Zhu Shijie¹,Shan Xinyi¹,Lin Runze¹,Qiu Pengjiang¹,Wang Zhou¹,Lu Xinyi¹,Yan Lintao¹,Cui Xugao¹,Zhang Guoqi¹,Tian Pengfei¹^ORCID

Affiliation:

1. Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University, Shanghai, 200433, China

Funder

National Key Research and Development Program of China

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Leading-edge Technology Program of Jiangsu Natural Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.2c01028

Reference39 articles.

1. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display

2. High-Bandwidth InGaN Self-Powered Detector Arrays toward MIMO Visible Light Communication Based on Micro-LED Arrays

3. Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

4. Recent Progress in Micro‐LED‐Based Display Technologies

5. Beyond 25 Gbps optical wireless communication using wavelength division multiplexed LEDs and micro-LEDs

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