A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep44814.pdf
Reference39 articles.
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2. Pust, P., Schmidt, P. J. & Schnick, W. A revolution in lighting. Nat. Mater. 14, 454–458 (2015).
3. Weisbuch, C. et al. The efficiency challenge of nitride light-emitting diodes for lighting. Phys. Status Solidi A 212, 899–913 (2015).
4. Piprek, J. Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207, 2217–2225 (2010).
5. Özgür, Ü., Liu, H., Li, X., Ni, X. & Morkoç, H. GaN-based light-emitting diodes: Efficiency at high injection levels. Proc. IEEE 98, 1180–1196 (2010).
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