Reduction of green-gap effect for light-emitting diodes using InGaN-ZnGeN2-InGaN/GaN type-II MQW-Reference-Cited by-同舟云学术

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Reduction of green-gap effect for light-emitting diodes using InGaN-ZnGeN2-InGaN/GaN type-II MQW

Published:2024-11 Issue: Volume:309 Page:117657
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Karan Himanshu

Publisher

Elsevier BV

Reference48 articles.

1. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering;Wu;Light Sci. Appl.,2022

2. High-brightness InGaN/GaN micro-LEDs with secondary peak effect for displays;Liu;IEEE Electron Device Lett.,2020

3. Monolithic integration of GaN-on-sapphire light-emitting diodes, photodetectors, and waveguides;Li;IEEE J. Sel. Top. Quantum Electron.,2018

4. Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures;Saha;Opt. Mater.,2018

5. Effect of periodically varying chirped AlxInyGa(1–x-y)N/ Al0.70Ga0.30N super-lattice based electron blocking region for nearly droop free UV-C LEDs;Mazumder;Mater. Sci. Eng. B,2024

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