High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1804607
Reference20 articles.
1. The Blue Laser Diode
2. Unstable mixing region in wurtzite In1−X−YGaXAlYN
3. Phase separation in InGaN/GaN multiple quantum wells
4. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
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