Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN-Reference-Cited by-同舟云学术

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Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

Published:1998-04-01 Issue:Part 2, No. 4A Volume:37 Page:L398-L400
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugahara Tomoya,Sato Hisao,Hao Maosheng,Naoi Yoshiki,Kurai Satoshi,Tottori Satoru,Yamashita Kenji,Nishino Katsushi,Romano Linda T.,Sakai Shiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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