High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate-Reference-Cited by-同舟云学术

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Published:2014-07-07 Issue:1 Volume:8 Page:083081
ISSN:1934-2608
Container-title:Journal of Nanophotonics
language:en
Short-container-title:J. Nanophoton

Author:

Shieh Chen-Yu¹,Tsai Ming-Ta²,Li Zhen-Yu³,Kuo Hao-Chung³,Chang Jeng-Yang¹,Chi Gou-Chung⁴,Lee Wei-I²

Affiliation:

1. National Central University, Department of Optics and Photonics, No. 300, Jhongda Road, Jhongli City, Taoyuan County 32001, Taiwan

2. National Chiao Tung University, Department of Electrophysics, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

3. National Chiao Tung University, Department of Photonic and Institute of Electro-Optical Engineering, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

4. National Central University, Department of Optics and Photonics, No. 300, Jhongda Road, Jhongli City, Taoyuan County 32001, TaiwancNational Chiao Tung University, Department of Photonic and Institute of Electro-Optical Engineering, 1001 Ta Hsueh Road, Hsi

Publisher

SPIE-Intl Soc Optical Eng

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Ultraviolet light emitting diodes

2. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

3. Ultraviolet light-emitting diodes based on group three nitrides

4. Near-ultraviolet LED of the External Quantum Efficiency Over 45% and its Application to High-color Rendering Phosphor Conversion White LEDs

5. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

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