Effect of Barrier Growth Temperature on the Material Properties of InGaN/GaN Multiple Quantum Well Structures
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference54 articles.
1. Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2. Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells
3. Nitride-based green light-emitting diodes with high temperature GaN barrier layers
4. Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells
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1. Enhance the electroluminescence efficiency of InGaN/GaN multiple quantum wells by optimizing the growth temperature of GaN barriers;Journal of Alloys and Compounds;2019-10
2. Mechanical and electronic properties under high pressure on ternary AlGaN and InGaN compounds—a first-principles perspective;Materials Research Express;2018-10-30
3. GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices;Applied Physics Letters;2018-08-20
4. Effect of O Impurity on the Properties of InGaN/GaN Multiple Quantum Well and Light Emitting Diode Structures;ECS Transactions;2014-03-20
5. Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes;ECS Journal of Solid State Science and Technology;2014
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