Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of GaN-Based Light-Emitting Diodes

Published:2014 Issue:11 Volume:3 Page:R200-R206
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Zhou Shizhong,Wang Haiyan,Lin Zhiting,Zhong Liyi,Lin Yunhao,Wang Wenliang,Yang Weijia,Hong Xiaosong,Li Guoqiang

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Effect of Barrier Growth Temperature on the Material Properties of InGaN/GaN Multiple Quantum Well Structures

2. Surface Planarization of GaN-on-Sapphire Template by Chemical Mechanical Polishing for Subsequent GaN Homoepitaxy

3. Enhancement of Optical Output Power of Light-Emitting Diodes with Photonic Crystals in InGaN/GaN Multiple Quantum Wells by Sulfide Passivation

4. Optimized Silicon Nanostructures Formed by One-Step Metal-Assisted Chemical Etching of Si(111) Wafers for GaN Deposition

5. Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells;Optical Materials Express;2018-05-15

2. High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates;Journal of Materials Chemistry C;2018

3. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08

4. Highly-efficient GaN-based light-emitting diode wafers on La0.3Sr1.7AlTaO6 substrates;Scientific Reports;2015-03-23

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