LED Materials: Epitaxy and Quantum Well Structures
Author:
Publisher
Springer International Publishing
Link
http://link.springer.com/content/pdf/10.1007/978-3-319-00295-8_10-1
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3. Arif RA, Ee YK, Tansu N (2007) Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Appl Phys Lett 91:091110
4. Bernardini F (2007) Chapter 3, Spontaneous and piezoelectric polarization: basic theory vs. practical recipes. In: Piprek J (ed) Nitride semiconductor devices: principles and simulation. Wiley, New York, pp 49–67
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2. Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths;Scientific Reports;2017-11-10
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