Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
2. Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers
3. Intrinsic Gettering of Copper in Silicon Wafers
4. Influence of rapid thermal annealing and internal gettering on Czochralski‐grown silicon. I. Oxygen precipitation
5. Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers
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