Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Vacancy-Assisted Oxygen Precipitation Phenomena in Si
2. Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers
3. Intrinsic Gettering of Copper in Silicon Wafers
4. Influence of rapid thermal annealing and internal gettering on Czochralski‐grown silicon. I. Oxygen precipitation
5. Modeling of Internal Gettering of Nickel and Copper by Oxide Precipitates in Czochralski-Si Wafers
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental Determination of Si Self-Interstitial Emission During Oxide Precipitation in Czochralski Silicon;ECS Journal of Solid State Science and Technology;2024-08-01
2. Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions;Journal of Electronic Materials;2021-01-09
3. Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination;ECS Journal of Solid State Science and Technology;2020-01-08
4. Measuring oxygen and bulk microdefects in silicon;Handbook of Silicon Based MEMS Materials and Technologies;2020
5. Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages;physica status solidi (a);2019-07-22
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3