Vacancy-Assisted Oxygen Precipitation Phenomena in Si-Reference-Cited by-同舟云学术

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Vacancy-Assisted Oxygen Precipitation Phenomena in Si

Published:1997-07 Issue: Volume:57-58 Page:129-136
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Falster Robert J.¹,Pagani M.¹,Gambaro D.,Cornara M.¹,Olmo M.,Ferrero G.,Pichler P.,Jacob M.

Affiliation:

1. MEMC Electronic Materials Inc.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.57-58.129.pdf

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2. Influence of Point Defects on the Equilibrium Concentration of Interstitial Oxygen in Crystalline Silicon;Ukrainian Journal of Physics;2022-02-10

3. Вплив легування атомами B, Si та P на електронні властивості кристала AlN з домішкою Mn;Ukrainian Journal of Physics;2022-02-10

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5. Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon;IEEE Journal of Photovoltaics;2020-11

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