Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions-Reference-Cited by-同舟云学术

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Oxygen Precipitation Behavior in n-Type Cz-Si Related to Carbon Concentration and Crystal Growth Conditions

Published:2021-01-09 Issue:3 Volume:50 Page:1474-1481
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Nishihara Tappei^ORCID,Onishi Kohei,Ohshita Yoshio,Ogura Atsushi

Funder

New Energy and Industrial Technology Development Organization

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-020-08702-w.pdf

Reference23 articles.

1. T. Tachibana, K. Nakamura, A. Ogura, Y. Ohshita, T. Shimoda, I. Masada, and E. Nishijima, AIP Adv. 7, 1 (2017).

2. G. Coletti, P. Manshanden, S. Bernardini, P.C.P. Bronsveld, A. Gutjahr, Z. Hu, and G. Li, Sol. Energy Mater. Sol. Cells 130, 647 (2014).

3. M.J. Binns, J. Kearns, and E.A. Good, ECS Trans. 60, 1233 (2014).

4. F. Shimura, T. Higuchi, and R.S. Hockett, Appl. Phys. Lett. 53, 69 (1988).

5. J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, and R.J. Falster, J. Appl. Phys. 118, 215706 (2015).

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