Outdiffusion of oxygen and carbon in Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100126
Reference15 articles.
1. The effect of carbon on thermal donor formation in heat treated pulled silicon crystals
2. The role of carbon in the precipitation of oxygen in silicon
3. Influence of carbon and oxygen on donor formation at 700 °C in Czochralski‐grown silicon
4. Carbon enhancement effect on oxygen precipitation in Czochralski silicon
5. Infrared Absorption and Oxygen Content in Silicon and Germanium
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3. Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions;Japanese Journal of Applied Physics;2019-02-05
4. Revisiting the effects of carbon-doping at 1017 cm−3 level on dislocation behavior of Czochralski silicon: from room temperature to elevated temperatures;Journal of Materials Science: Materials in Electronics;2019-01-02
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