Influence of carbon and oxygen on donor formation at 700 °C in Czochralski‐grown silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331461
Reference12 articles.
1. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
2. Gettering of surface and bulk impurities in Czochralski silicon wafers
3. Lifetime improvement in Czochralski‐grown silicon wafers by the use of a two‐step annealing
4. Comparison of two kinds of oxygen donors in silicon by resistivity measurements
5. Influence of oxygen on silicon resistivity
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1. Thermal donor formation in CZ-silicon with reference to dimers, trimers and V–O interaction;Physica B: Condensed Matter;2009-05
2. Role of oxygen and carbon on donor formation in step-annealed CZ-silicon;Journal of Physics and Chemistry of Solids;2004-07
3. Oxygen related donors in Czochralski-grown silicon annealed at 465–650°C;Journal of Physics and Chemistry of Solids;1999-03
4. Annihilation Process of New Donors in N-Type Carbon-Rich CZ Silicon;Materials Transactions, JIM;1996
5. Enhancement and Suppression Effect of Carbon Atoms on Oxygen Aggregation and New Donor Formation in Silicon Crystals Preannealed at Low Temperatures;Japanese Journal of Applied Physics;1995-09-15
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