Role of oxygen and carbon on donor formation in step-annealed CZ-silicon-Reference-Cited by-同舟云学术

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Role of oxygen and carbon on donor formation in step-annealed CZ-silicon

Published:2004-07 Issue:7 Volume:65 Page:1265-1269
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Dubey Vikash,Singh Shyam

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference29 articles.

1. Mechanism of the Formation of Donor States in Heat-Treated Silicon

2. Thirteenth International Conference on Defects in Semiconductors;Bourett,1985

3. Infrared spectroscopic study of thermal donors in Czochralski-grown silicon developed at 450°C

4. Thirteenth International Conference on Defects in Semiconductors;Oehrlein,1985

5. Deep Level Luminescence Ralated to Thermal Donors in Silicon

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1. Tin-based donors in SiSn alloys;Journal of Applied Physics;2019-07-21

2. Numerical simulation on n-MoS2/p-Si heterojunction solar cells;Modern Physics Letters B;2017-03-10

3. Influence of deep level defects on the performance of crystalline silicon solar cells: Experimental and simulation study;Solar Energy Materials and Solar Cells;2011-10

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