The effect of oxide precipitates on minority carrier lifetime in n-type silicon-Reference-Cited by-同舟云学术

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The effect of oxide precipitates on minority carrier lifetime in n-type silicon

Published:2015-12-07 Issue:21 Volume:118 Page:215706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murphy J. D.¹,Al-Amin M.¹,Bothe K.²^ORCID,Olmo M.³,Voronkov V. V.⁴,Falster R. J.³

Affiliation:

1. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

2. Institut für Solarenergieforschung Hameln/Emmerthal, Am Ohrberg 1, 31860 Emmerthal, Germany

3. SunEdison Semiconductor, Viale Gherzi 31, 28100 Novara, Italy

4. SunEdison Semiconductor, Via Nazionale 59, 39012 Merano, Italy

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Royal Academy of Engineering

Royal Society

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936852

Reference46 articles.

1. The Gettering of Transition Metals by Oxygen‐Related Defects in Silicon

2. Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon

3. A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption

4. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon

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3. Adjustment of oxygen transport phenomena for Czochralski silicon crystal growth;Heliyon;2024-04

4. Effect of oxygen-related defects on the performance of seed-end wafers in Ga-doped recharged Czochralski silicon: Thermal donors;Journal of Crystal Growth;2024-03

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