A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption-Reference-Cited by-同舟云学术

A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption

Published:1989-05 Issue:5 Volume:59 Page:499-522
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Bergholz W.¹²³,Binns M. J.⁴⁵,Booker G. R.¹,Hutchison J. C.¹,Kinder S. H.⁶⁷,Messoloras S.⁶,Newman R. C.⁶,Stewart R. J.⁶,Wilkes J. G.⁴

Affiliation:

1. a Department of Metallurgy and Science of Materials, Parks Road , University of Oxford , Oxford , OX1 3PH , England

2. d Universität Göttingen , Göttingen , F.R. Germany

3. e Siemens AG , Otto-Hahn-Ring 6, 8000 , München , 83 , F.R. Germany

4. b Philips Components , Millbrook Industrial Estate Southampton SO9 7BH, England

5. f Monsanto Electronic Materials Co. , Featherstone Road, Wolverton Mill South, Milton Keynes, Buckinghamshire MK12 5TB, England

6. c J. J. Thomson Physical Laboratory , University of Reading , Whiteknights, Reading , RG6 2AF , England

7. g SERC, Daresbury Laboratory , Warrington , WA4 4AD , England

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642818908211173

Reference29 articles.

1. Investigation of the oxygen-related lattice defects in Czochralski silicon by means of electron microscopy techniques

2. Bergholz , W. Hutchison , J. C. and Booker , G. R. 1986.Semiconductor Silicon 1986, Proceedings of the Fifth International Symposium on Silicon Material and Technology, Edited by: Huff , H. R. Abe , T. and Kolbesen , R. 874Pennington, New Jersey: Electrochemical Society.

3. Precipitation of oxygen at 485 °C: Direct evidence for accelerated diffusion of oxygen in silicon?

4. Diffusion limited precipitation of oxygen in dislocation‐free silicon

5. Bourret , A. 1987.Institute of Physics Conference Series No. 87, 49Bristol: Institute of Physics.

Cited by 78 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental and Theoretical Study of Oxygen Precipitation and the Resulting Limitation of Silicon Solar Cell Wafers;IEEE Journal of Photovoltaics;2021-03

2. Onset of ring defects in n-type Czochralski-grown silicon wafers;Journal of Applied Physics;2020-04-21

3. Editors’ Choice—Precipitation of Suboxides in Silicon, their Role in Gettering of Copper Impurities and Carrier Recombination;ECS Journal of Solid State Science and Technology;2020-01-08

4. Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon;Semiconductor Science and Technology;2019-02-25

5. Finding unstrained 10 -nm lattice defects in silicon, given 1011 per cubic centimeter;Microscopy and Microanalysis;2017-07