1. Quantitative determination of oxygen in silicon by combination of FTIR-spectroscopy, inert gas fusion analysis and secondary ion mass spectroscopy;Stingeder;Fresenius Z. Anal. Chem.,1989
2. Test methods for determining interstitial oxygen content are covered by the following standards: SEMI MF951-0305 (2011), SEMI MF1188-1107 (2012), SEMI MF1619-1107 (2012), SEMI MF1366-0308 (2013). International SEMI Standards, .
3. SEMI MF1239-0305, Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction, International SEMI Standards, , 2011.
4. SEMI MF1188-1107, Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorptoin with Short Baseline.
5. SEMI M44-00-0305, Guide to Conversion Factors for Interstitial Oxygen in Silicon, International SEMI Standards, , 2011.