Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages-Reference-Cited by-同舟云学术

Peculiarity of Electric Properties of Oxygen‐Implanted Silicon at Early Precipitation Stages

Published:2019-07-22 Issue:17 Volume:216 Page:1900327
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Danilov Denis¹^ORCID,Vyvenko Oleg¹,Loshachenko Anton²,Sobolev Nikolay³

Affiliation:

1. Faculty of PhysicsSaint-Petersburg State University Uliyanovskaya 1 St. Petersburg 198504 Russia

2. Interdisciplinary Research Center for NanotechnologySaint-Petersburg State University Uliyanovskaya 1 St. Petersburg 198504 Russia

3. Department of Solid State ElectronicsIoffe Institute Polytekhnicheskaya 26 St. Petersburg 194021 Russia

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900327

Reference34 articles.

1. SiOxprecipitate composition in Si, revisited: Discussion closed?

2. Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

3. Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

4. Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

5. Oxygen precipitation in silicon

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