Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers-Reference-Cited by-同舟云学术

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Published:2017 Issue:4 Volume:6 Page:N17-N24
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kot D.,Kissinger G.,Schubert M. A.,Sattler A.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Oxygen precipitation in silicon

2. Influence of oxygen precipitates on silicon resistivity in the 650 °C range

3. Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation

4. Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

5. Sueoka K. Akatsuka M. Ono T. Asayama E. Koike Y. Adachi N. Sadamitsu S. Katahama H. , in High Purity Silicon VI, Claeys C. L. Rai-Choudhury P. Watanabe M. Stallhofer P. Dawson H. J. , Editors, PV 2000-17, p. 164, The Electrochemical Proceedings Series, Pennington, NJ (2000).

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