Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation-Reference-Cited by-同舟云学术

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Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation

Published:1985-07-20 Issue:Part 1, No. 7 Volume:24 Page:815-821
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shimizu Hirofumi,Watanabe Tetsuo,Kakui Yoshiharu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Study of Slip Defects in Furnace High Temperature Process;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. Investigation on Evolution of Oxygen Precipitates in Bonded SOI Substrate;ECS Journal of Solid State Science and Technology;2019

3. Effect of rapid thermal annealing on bulk micro-defects and plastic deformation in silicon during high temperature processing;Materials Science in Semiconductor Processing;2018-10

4. Investigation of Wafer Warpage Induced by Multi-layer Films;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2018-02-28

5. Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers;ECS Journal of Solid State Science and Technology;2017

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