Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy-Reference-Cited by-同舟云学术

Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

Published:2015-06-29 Issue:7 Volume:9 Page:405-409
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Kot Dawid¹,Kissinger Gudrun¹,Schubert Markus Andreas¹,Klingsporn Max¹,Huber Andreas²,Sattler Andreas²

Affiliation:

1. IHP; Im Technologiepark 25 15236 Frankfurt Germany

2. Siltronic AG; Hanns-Seidel-Platz 4 81737 München Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201510194/fullpdf

Reference27 articles.

1. Key influence of the thermal history on process-induced defects in Czochralski silicon wafers

2. Grown‐in Oxide Precipitate Nuclei in Czochralski Silicon Substrates and Their Role in Device Processing

3. K. Sueoka M. Akatsuka T. Ono E. Asayama Y. Koike N. Adachi S. Sadamitsu H. Katahama High Purity Silicon VI, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer and H. J. Dawson, The Electrochemical Proceedings Series, PV 2000-17 (Pennington, NJ, 2000), p. 164

4. Influence of Cu Concentration on the Getter Efficiency of Dislocations and Oxygen Precipitates in Silicon Wafers

5. Morphology and growth process of thermally induced oxide precipitates in Czochralski silicon

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